AOD2908 100v n-channel mosfet v ds i d (at v gs =10v) 52a r ds(on) (at v gs =10v) < 13.5m w symbol v ds v gs the AOD2908 uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss. this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v units parameter absolute maximum ratings t a =25c unless otherwise noted 100v drain-source voltage 100 maximum v 2 0 gate-source voltage g d s v gs i dm i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc pulsed drain current j 150 a 36 75 20 a t a =70c 20 i d w t c =25c t c =100c mj avalanche current c 7 37 120 maximum junction-to-case pulsed drain current i continuous drain current power dissipation a 20 t c =100c power dissipation b p d -55 to 175 52 avalanche energy l=0.1mh c continuous drain current i dsm 9 c/w c/w maximum junction-to-ambient a d 1.5 50 2 w t a =70c 1.6 t a =25c 2.5 p dsm a t a =25c v 2 0 gate-source voltage t c =25c c thermal characteristics parameter typ max units junction and storage temperature range maximum junction-to-ambient a c/w r q ja 15 41 www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.7 3.3 4.1 v i d(on) 120 a i d(on) 150 a 11 13.5 t j =125c 18 23 g fs 30 s v sd 0.7 1 v i s 70 a c iss 1250 1670 pf c oss 727 970 pf c rss 25 43 pf r g 2 3 w q g (10v) 19 27 nc q gs 5.5 nc q gd 6 nc t d(on) 7.5 ns t r 14 ns t d(off) 15 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v r ds(on) static drain-source on-resistance i dss m a zero gate voltage drain current m w on state drain current v gs =10v, v ds =5v,pw=260 m s v gs =10v, i d =20a gate-body leakage current v ds =v gs i d =250 m a v ds =0v, v gs =20v on state drain current v gs =10v, v ds =5v,pw=1 m s forward transconductance turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz i s =1a,v gs =0v v ds =5v, i d =20a diode forward voltage maximum body-diode continuous current g input capacitance output capacitance v gs =10v, v ds =50v, i d =20a reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz turn-on delaytime dynamic parameters total gate charge gate source charge gate drain charge switching parameters t d(off) 15 ns t f 14 ns t rr 39 ns q rr 140 nc turn-off delaytime r gen =3 w turn-off fall time i f =20a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximum temperat ure of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and is more u seful in setting the upper dissipation limit for cases where additional heatsinking i s used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175 c. ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. i: the i dm is obtained using 260 m s pulses. j: the i dm is obtained using 1 m s pulses. www.freescale.net.cn 2/6 AOD2908 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 2 3 4 5 6 7 8 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 8 10 12 14 16 18 20 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 6v 7v 10v vgs=5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 8 16 24 32 40 5 6 7 8 9 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/6 AOD2908 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =50v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =175 c t c =25 c 100 m s 40 for (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse area (note f) r q jc =2 c/w www.freescale.net.cn 4/6 AOD2908 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 30 60 90 120 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 18: power de-rating (note f) 0 20 40 60 80 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 17: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 20: single pulse power rating junction - to - t a =25 c 10 100 1 10 100 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 19: single pulse avalanche capability t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 21: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 20: single pulse power rating junction - to - ambient (note h) r q ja =60 c/w figure 19: single pulse avalanche capability (note c) www.freescale.net.cn 5/6 AOD2908 100v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 6/6 AOD2908 100v n-channel mosfet
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